BFG92A Datasheet, PDF (3/13 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG92A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature range
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 60 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2
25
400
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
290
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector leakage current
h_FE
DC current gain
C_c
collector capacitance
C_e
emitter capacitance
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power
gain; note 1
F
noise figure
CONDITIONS
MIN.
I_E = 0; V_CB = 10 V
−
I_C = 15 mA; V_CE = 10 V
65
I_E = i_e = 0; V_CB = 10 V; f = 1 MHz
−
I_C = i_c = 0; V_EB = 10 V; f = 1 MHz
−
I_C = i_c = 0; V_CB = 10 V; f = 1 MHz
−
I_C = 15 mA; V_CE = 10 V; f = 500 MHz 3.5
I_C = 15 mA; V_CE = 10 V;
−
T_amb = 25 °C; f = 1 GHz
I_C = 15 mA; V_CE = 10 V;
−
T_amb = 25 °C; f = 2 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 10 V;
−
T_amb = 25 °C; f = 1 GHz
Γ_s = Γ_opt; I_C = 5 mA; V_CE = 10 V;
−
T_amb = 25 °C; f = 2 GHz
TYP.
−
90
0.6
0.9
0.35
5
16
11
2
3
MAX. UNIT
50
nA
135
−
pF
−
pF
−
pF
−
GHz
−
dB
−
dB
−
dB
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming S₁₂ is zero and G_UM
=
10
log --₍--1-----_–------S----₁---₁----S₂---₎-²---¹₍---1-²----_–------S----₂--₂-----₂---₎-
dB.
Rev. 06 - 12 March 2008
3 of 13