BFG25A Datasheet, PDF (3/12 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG25A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 165 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
8
5
2
6.5
32
150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
R_{th j-s}
thermal resistance from junction to soldering point note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
VALUE
320
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
I_CBO
collector leakage current
h_FE
DC current gain
C_re
feedback capacitance
f_T
transition frequency
G_UM
maximum unilateral power gain
(note 1)
F
noise figure
CONDITIONS
I_E = 0; V_CB = 5 V
I_C = 0.5 mA; V_CE = 1 V
I_C = i_c = 0; V_CB = 1 V; f = 1 MHz
I_C = 1 mA; V_CE = 1 V;
T_amb = 25 °C; f = 500 MHz
I_C = 0.5 mA; V_CE = 1 V;
f = 1 GHz; T_amb = 25 °C
I_C = 0.5 mA; V_CE = 1 V; f = 1 GHz;
Γ = Γ_opt; T_amb = 25 °C
I_C = 1 mA; V_CE = 1 V; f = 1 GHz;
Γ = Γ_opt; T_amb = 25 °C
MIN.
−
50
−
3.5
TYP.
−
80
0.21
5
MAX. UNIT
50
µA
200
0.3 pF
−
GHz
−
18
−
dB
−
1.8 −
dB
−
2
−
dB
Note
1. G_UM is the maximum unilateral power gain, assuming
S₁₂ is
zero and
G_UM
=
10
log-_---1-----_–------_S----₁---₁----₂^S---_-²--_-¹---1-²----_–------_S----₂--₂-----₂--_-- dB
Rev. 04 - 27 November 2007
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