BCV27 Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN Darlington transistors

NXP Semiconductors
NPN Darlington transistors
Product data sheet
BCV27; BCV47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
T_amb
PARAMETER
collector-base voltage
BCV27
BCV47
collector-emitter voltage
BCV27
BCV47
emitter-base voltage
collector current (DC)
peak collector current
base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
T_amb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
40
V
−
80
V
−
30
V
−
60
V
−
10
V
−
500
mA
−
800
mA
−
100
mA
−
250
mW
−65
+150 °C
−
150
°C
−65
+150 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-a)
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
2004 Jan 13
3