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BC849W Datasheet, PDF (3/7 Pages) NXP Semiconductors – NPN general purpose transistors
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NXP Semiconductors
NPN general purpose transistors
Product data sheet
BC849W; BC850W
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBE
emitter cut-off current
DC current gain
BC849BW; BC850BW
BC849CW; BC850CW
collector-emitter saturation
voltage
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
CONDITIONS
MIN.
IE = 0; VCB = 30 V
−
IE = 0; VCB = 30 V; Tj = 150 °C
−
IC = 0; VEB = 5 V
−
IC = 2 mA; VCE = 5 V; see Figs 2 and 3
200
420
IC = 10 mA; IB = 0.5 mA
−
IC = 100 mA; IB = 5 mA; note 1
−
IC = 2 mA; VCE = 5 V
580
IC = 10 mA; VCE = 5 V
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
IC = 10 mA; VCE = 5 V; f = 100 MHz 100
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
−
f = 10 Hz to 15.7 kHz
IC = 200 μA; VCE = 5 V; RS = 2 kΩ;
−
f = 1 kHz; B = 200 Hz
TYP.
−
−
−
−
−
−
−
−
−
−
11
−
−
−
MAX.
15
5
100
450
800
250
600
700
770
3
−
−
4
4
UNIT
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
dB
1999 Apr 12
3
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