BC807DS Datasheet, PDF (3/7 Pages) NXP Semiconductors – PNP general purpose double transistor

NXP Semiconductors
PNP general purpose double transistor
Product data sheet
BC807DS
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to note 1
ambient
CONDITIONS
VALUE
208
UNIT
K/W
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm².
CHARACTERISTICS
T_amb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Per transistor
I_CBO
I_EBO
h_FE
V_CEsat
V_BE
collector-base cut-off current
V_CB = −20 V; I_E = 0
−
−
V_CB = −20 V; I_E = 0; T_j = 150 °C −
−
emitter-base cut-off current
V_EB = −5 V; I_C = 0
−
−
DC current gain
V_CE = −1 V; I_C = −100 mA; note 1 160 −
V_CE = −1 V; I_C = −500 mA; note 1 40
−
collector-emitter saturation voltage I_C = −500 mA; I_B = −50 mA; note 1 −
−
base-emitter voltage
V_CE = −1 V; I_C = −500 mA;
notes 1 and 2
−
−
C_c
collector capacitance
f_T
transition frequency
V_CB = −10 V; I_E = I_e = 0; f = 1 MHz −
9
V_CE = −5 V; I_C = −10 mA;
f = 100 MHz
80
−
−100 nA
−5
μA
−100 nA
400
−
−700 mV
−1.2 V
−
pF
−
MHz
Notes
1. Pulse test: t_p ≤ 300 μs; δ ≤ 0.02.
2. V_BE decreases by approximately −2 mV/K with increasing temperature.
2002 Nov 22
3