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| BAT54C Datasheet, PDF (3/7 Pages) Rectron Semiconductor – DUAL SURFACE MOUNT SCHOTTKY | |||
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NXP Semiconductors
Schottky barrier (double) diodes
Product data sheet
BAT54 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
VR
continuous reverse voltage
IF
continuous forward current
IFRM
repetitive peak forward current
IFSM
non-repetitive peak forward current
Tstg
storage temperature
Tj
junction temperature
Per device
Ptot
total power dissipation
tp ⤠1 s; δ ⤠0.5
tp < 10 ms
Tamb ⤠25 °C
MIN. MAX. UNIT
â
30
V
â
200 mA
â
300 mA
â
600 mA
â65 +150 °C
â
125 °C
â
230 mW
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to
ambient
Note
1. Refer to SOT23 standard mounting conditions.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
VF
forward voltage
IR
reverse current
trr
reverse recovery time
Cd
diode capacitance
CONDITIONS
MAX.
UNIT
see Fig.3
IF = 0.1 mA
240
mV
IF = 1 mA
320
mV
IF = 10 mA
400
mV
IF = 30 mA
500
mV
IF = 100 mA
800
mV
VR = 25 V; see Fig.4
2
μA
when switched from IF = 10 mA 5
ns
to IR = 10 mA; RL = 100 Ω;
measured at IR = 1 mA;
see Fig.6
f = 1 MHz; VR = 1 V; see Fig.5 10
pF
2002 Mar 04
3
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