BAS29 Datasheet, PDF (3/9 Pages) NXP Semiconductors – General purpose controlled avalanche double diodes

NXP Semiconductors
General purpose controlled avalanche
(double) diodes
Product data sheet
BAS29; BAS31; BAS35
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per diode
V_RRM
V_R
I_F
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
I_FRM
repetitive peak forward current
I_FSM
non-repetitive peak forward current
P_tot
I_RRM
E_RRM
T_stg
T_j
total power dissipation
repetitive peak reverse current
repetitive peak reverse energy
storage temperature
junction temperature
single diode loaded; see Fig.2;
note 1
double diode loaded; see Fig.2;
note 1
square wave; T_j = 25 °C prior to
surge; see Fig.4
t = 1 µs
t = 100 µs
t=1s
T_amb = 25 °C; note 1
t_p ≥ 50 µs; f ≤ 20 Hz; T_j = 25 °C
Note
1. Device mounted on an FR4 printed-circuit board.
MIN. MAX. UNIT
−
110
V
−
90
V
−
250
mA
−
150
mA
−
600
mA
−
10
A
−
4
A
−
0.75
A
−
250
mW
−
600
mA
−
5
mJ
−65
+150 °C
−
150
°C
2003 Mar 20
3