BAP70-03 Datasheet, PDF (3/7 Pages) NXP Semiconductors – Silicon PIN diode

NXP Semiconductors
Silicon PIN diode
Product specification
BAP70-03
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_F
forward voltage
I_R
reverse leakage current
C_d
diode capacitance
r_D
diode forward resistance
τ_L
charge carrier life time
L_S
series inductance
CONDITIONS
I_F = 50 mA
V_R = 50 V
V_R = 0 V; f = 1 MHz
V_R = 1 V; f = 1 MHz
V_R = 5 V; f = 1 MHz
V_R = 20 V; f = 1 MHz
I_F = 0.5 mA; f = 100 MHz
I_F = 1 mA; f = 100 MHz
I_F = 10 mA; f = 100 MHz
I_F = 100 mA; f = 100 MHz
when switched from I_F = 10 mA to
I_R = 6 mA; R_L = 100 Ω;
measured at I_R = 3 mA
I_F = 100 mA; f = 100 MHz
TYP.
0.9
−
570
400
270
200
77
40
5.4
1.4
1.25
1.5
MAX.
1.1
100
−
−
−
250
100
50
7
1.9
−
UNIT
V
nA
fF
fF
fF
fF
Ω
Ω
Ω
Ω
µs
−
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_th(j-s)
thermal resistance from junction to soldering point
VALUE
120
UNIT
K/W
Rev. 05 - 27 March 2007
3 of 7