BAP51LX Datasheet, PDF (3/8 Pages) NXP Semiconductors – Silicon PIN diode

NXP Semiconductors
Table 6. Characteristics …continued
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
L_ins
insertion loss
see Figure 4; I_F = 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L_ins
insertion loss
see Figure 4; I_F = 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L_ins
insertion loss
see Figure 4; I_F = 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L_ins
insertion loss
see Figure 4; I_F = 100 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τ_L
charge carrier life time when switched from I_F = 10 mA to
I_R = 6 mA; R_L = 100 Ω; measured at
I_R = 3 mA
L_S
series inductance
I_F = 100 mA; f = 100 MHz
BAP51LX
Silicon PIN diode
Min Typ Max Unit
-
0.36 -
dB
-
0.36 -
dB
-
0.38 -
dB
-
0.25 -
dB
-
0.26 -
dB
-
0.27 -
dB
-
0.12 -
dB
-
0.14 -
dB
-
0.15 -
dB
-
0.09 -
dB
-
0.10 -
dB
-
0.12 -
dB
-
0.55 -
µs
-
0.4
-
nH
400
C_d
(fF)
300
200
100
001aag633
10²
r_D
(Ω)
10
1
001aag634
0
0
4
8
12
16
20
V_R (V)
f = 1 MHz; T_j = 25 °C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
10^−1
10^−1
1
10
10²
I_F (mA)
f = 100 MHz; T_j = 25 °C.
Fig 2. Forward resistance as a function of forward
current; typical values
BAP51LX_1
Product data sheet
Rev. 01 — 26 June 2007
© NXP B.V. 2007. All rights reserved.
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