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AN11470 Datasheet, PDF (3/25 Pages) NXP Semiconductors – Leadless Schottky diodes in a DC-to-DC step-up converter
NXP Semiconductors
AN11470
Leadless Schottky diodes in a DC-to-DC step-up converter
1. Introduction
Most of the mobile communication and computing devices like mobile phones, tablet PCs,
navigation systems and notebooks use LCDs. An LCD display needs backlight that is
placed behind the LCD shutter system. For each pixel of the display LCD crystals can
block light transmission when a black pixel is displayed or they let light pass to generate
e.g. a white pixel. The degree of transmissibility is controlled for each pixel to allow gray
level in between. In modern LCD devices white LEDs are chosen as an energy efficient
light source. They combine advantages like a long life time, a constant white temperature
over time and low heat dissipation. The light produced by LEDs is distributed with plastic
light spreaders to achieve a uniform brightness for all areas of the display. White LEDs
have a forward voltage VF of 3.2 V to 3.6 V. The LEDs are clustered into strings, where a
defined number of LEDs is placed in series to build a string. The forward voltage of a
string is the multiple of VF of a single LED.
The supply voltage of mobile devices is usually lower than the voltage required to drive
LED strings for the LCD backlight. In smartphones normally a single lithium-ion cell
provides roughly 3.8 V. Therefore a voltage up conversion or a boosting of the battery
voltage towards a suitable voltage of the backlight is required. The voltage conversion has
to work like the LEDs themselves with a high energy efficiency. Furthermore small and low
weight components have to be chosen for the circuits.
The voltage up conversion is usually implemented in a switch mode topology. The
conversion block requires an electronic switch, a diode, an inductor and a capacitor as
discrete key components.
This application note focuses on the Schottky diodes that can be found in backlight
step-up converters. New package technologies and enhanced Schottky processes allow
more compact designs in combination with an excellent energy efficiency.
AN11470
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 22 April 2014
© NXP B.V. 2014. All rights reserved.
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