PMZ390UN Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
PMZ390UN
N-channel TrenchMOS standard level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
PMZ390UN
SC-101
4. Limiting values
Description
leadless ultra small plastic package; 3 solder lands;
body 1.0 × 0.6 × 0.5 mm
Version
SOT883
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
V_DGR
V_GS
I_D
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
25 °C ≤ T_j ≤ 150 °C
25 °C ≤ T_j ≤ 150 °C; R_GS = 20 kΩ
T_mb = 25 °C; V_GS = 10 V; see Figure 2 and 3
T_mb = 100 °C; V_GS = 10 V; see Figure 2
T_mb = 25 °C; pulsed; t_p ≤ 10 µs; see Figure 3
T_mb = 25 °C; see Figure 1
I_S
source current
I_SM
peak source current
Electrostatic discharge
T_mb = 25 °C
T_mb = 25 °C; pulsed; t_p ≤ 10 µs
V_esd
electrostatic discharge voltage all pins
human body model; C = 100 pF; R = 1.5 kΩ
machine model; C = 200 pF
Min
Max Unit
-
30
V
-
30
V
-
±8
V
-
1.78 A
-
1.13 A
-
3.56 A
-
2.50 W
−55
+150 °C
−55
+150 °C
-
1.78 A
-
3.56 A
-
60
V
-
30
V
PMZ390UN_1
Product data sheet
Rev. 01 — 12 July 2007
© NXP B.V. 2007. All rights reserved.
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