PEMD12 Datasheet, PDF (2/8 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors

NXP Semiconductors
NPN/PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = 47 kΩ
Product data sheet
PEMD12; PUMD12
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• Low current peripheral driver
• Replacement of general purpose transistors in digital
applications
• Control of IC inputs.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
TR1
NPN
TR2
PNP
R1
bias resistor
R2
bias resistor
TYP.
−
−
−
−
47
47
MAX. UNIT
50 V
100 mA
−
−
−
−
−
kΩ
−
kΩ
DESCRIPTION
NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE
NUMBER
PEMD12
PUMD12
PACKAGE
PHILIPS
SOT666
SOT363
EIAJ
SC-88
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE
D2
D*1⁽¹⁾
PNP/PNP
COMPLEMENT
PEMB2
PUMB2
NPN/NPN
COMPLEMENT
PEMH2
PUMH2
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
PEMD12
PUMD12
SIMPLIFIED OUTLINE AND SYMBOL
6
5
4
1
2
3
Top view
6
5
4
R1 R2
TR2
TR1
R2 R1
1
2
3
MAM468
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
2003 Oct 08
2