PDTC143E Datasheet, PDF (2/14 Pages) NXP Semiconductors – NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

NXP Semiconductors
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ
Product data sheet
PDTC143E series
FEATURES
• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.
QUICK REFERENCE DATA
SYMBOL PARAMETER
V_CEO
collector-emitter
voltage
I_O
output current (DC)
R1
bias resistor
R2
bias resistor
TYP.
−
−
4.7
4.7
MAX. UNIT
50 V
100 mA
−
kΩ
−
kΩ
DESCRIPTION
NPN resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
PRODUCT OVERVIEW
TYPE NUMBER
PDTC143EE
PDTC143EEF
PDTC143EK
PDTC143EM
PDTC143ES
PDTC143ET
PDTC143EU
PACKAGE
PHILIPS
SOT416
SOT490
SOT346
SOT883
SOT54 (TO-92)
SOT23
SOT323
EIAJ
SC-75
SC-89
SC-59
SC-101
SC-43
−
SC-70
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE⁽¹⁾ PNP COMPLEMENT
02
51
02
E1
TC143E
*02
*02
PDTA143EE
PDTA143EEF
PDTA143EK
PDTA143EM
PDTA143ES
PDTA143ET
PDTA143EU
2004 Aug 05
2