PBSS3540M Datasheet, PDF (2/9 Pages) NXP Semiconductors – 40 V, 0.5 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
40 V, 0.5 A
PNP low V_CEsat (BISS) transistor
Product data sheet
PBSS3540M
FEATURES
• Low collector-emitter saturation voltage V_CEsat
• High collector current capability I_C and I_CM
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management:
– DC-DC converter
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load drivers (e.g. relays, buzzers and
motors).
DESCRIPTION
Low V_CEsat PNP transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: PBSS2540M.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
I_CM
R_CEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX. UNIT
−40 V
−500 mA
−1
A
<700 mΩ
PINNING
PIN
1
base
2
emitter
3
collector
DESCRIPTION
handbook, halfpag₂e
1
Bottom view
3
3
1
2
MAM469
MARKING
TYPE NUMBER
PBSS3540M
MARKING CODE
DA
Fig.1 Simplified outline (SOT883) and symbol.
2003 Aug 12
2