PBSS2515E Datasheet, PDF (2/12 Pages) NXP Semiconductors – 15 V, 0.5 A NPN low VCEsat (BISS) transistor

NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low V_CEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
base
emitter
collector
Simplified outline Graphic symbol
3
3
1
2
1
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS2515E
SC-75
plastic surface-mounted package; 3 leads
Version
SOT416
4. Marking
Table 4. Marking codes
Type number
PBSS2515E
Marking code
1Q
5. Limiting values
PBSS2515E_2
Product data sheet
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_CBO
collector-base voltage
open emitter
-
V_CEO
collector-emitter voltage open base
-
V_EBO
emitter-base voltage
open collector
-
I_C
collector current
-
I_CM
peak collector current
single pulse;
-
t_p ≤ 1 ms
I_BM
peak base current
single pulse;
-
t_p ≤ 1 ms
P_tot
total power dissipation
T_amb ≤ 25 °C
[1] _-
[2] _-
T_j
junction temperature
-
T_amb
ambient temperature
−65
T_stg
storage temperature
−65
Max Unit
15
V
15
V
6
V
0.5
A
1
A
100
mA
150
mW
250
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm².
Rev. 02 — 21 April 2009
© NXP B.V. 2009. All rights reserved.
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