BYQ28 Datasheet, PDF (2/10 Pages) NXP Semiconductors – Rectifier diodes ultrafast, rugged

NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
BYQ28E-200
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
BYQ28ED-200
DPAK
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
Version
SOT78
SOT428
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_RRM
V_RWM
V_R
I_O(AV)
I_FRM
I_FSM
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
square waveform; δ = 1.0
square waveform; δ = 0.5;
T_mb ≤ 119 °C; both diodes conducting
t_p = 25 µs; square waveform; δ = 0.5;
T_mb ≤ 119 °C; per diode
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
I_RM
I_RSM
peak reverse recovery current
non-repetitive peak reverse
current
t_p = 2 µs; δ = 0.001
t_p = 100 µs
T_stg
storage temperature
T_j
junction temperature
Electrostatic discharge
V_ESD
electrostatic discharge voltage all pins; human body model;
C = 250 pF; R = 1.5 kΩ
Min
Max
Unit
-
200
V
-
200
V
-
200
V
-
10
A
-
10
A
-
50
A
-
55
A
-
0.2
A
-
0.2
A
−40
+150
°C
-
150
°C
-
8
kV
BYQ28_SER_E_ED_4
Product data sheet
Rev. 04 — 5 December 2007
© NXP B.V. 2007. All rights reserved.
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