BUK7608-40B Datasheet, PDF (2/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7608-40B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
mounting base; connected to
drain
Simplified outline
mb
[1]
2
13
SOT404
(D2PAK)
[1] It is not possible to make a connection to pin 2.
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
Description
BUK7608-40B D2PAK
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one
lead cropped)
Version
SOT404
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min Max Unit
V_DS
V_DGR
V_GS
I_D
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
-
drain-gate voltage
R_GS = 20 kΩ
-
gate-source voltage
-20
drain current
T_mb = 25 °C; V_GS = 10 V; see Figure 1; see Figure [1] -
3;
40
V
40
V
20
V
101 A
T_mb = 100 °C; V_GS = 10 V; see Figure 1;
[1] -
T_mb = 25 °C; V_GS = 10 V; see Figure 1; see Figure [2] -
3;
71
A
75
A
I_DM
peak drain current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
Source-drain diode
T_mb = 25 °C; t_p ≤ 10 µs; pulsed; see Figure 3
T_mb = 25 °C; see Figure 2
-
407 A
-
157 W
-55 175 °C
-55 175 °C
I_S
source current
T_mb = 25 °C;
T_mb = 25 °C;
I_SM
peak source current t_p ≤ 10 µs; pulsed; T_mb = 25 °C
[1] -
[2] -
-
101 A
75
A
407 A
BUK7608-40B_4
Product data sheet
Rev. 04 — 24 September 2008
© NXP B.V. 2008. All rights reserved.
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