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| BUK6218-40C Datasheet, PDF (2/14 Pages) NXP Semiconductors – N-channel TrenchMOS intermediate level FET | |||
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NXP Semiconductors
BUK6218-40C
N-channel TrenchMOS intermediate level FET
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
Avalanche ruggedness
EDS(AL)S
non-repetitive
ID = 42 A; Vsup ⤠40 V;
drain-source
VGS = 10 V; Tj(init) = 25 °C;
avalanche energy unclamped
Dynamic characteristics
QGD
gate-drain charge ID = 25 A; VDS = 32 V;
VGS = 10 V; see Figure 13;
see Figure 14
Min Typ Max Unit
-
-
25 mJ
-
7.7 -
nC
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
mb
2
1
3
SOT428 (DPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
BUK6218-40C
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUK6218-40C
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 4 October 2010
© NXP B.V. 2010. All rights reserved.
2 of 14
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