BTA312X Datasheet, PDF (2/12 Pages) NXP Semiconductors – 12 A Three-quadrant triacs high commutation

NXP Semiconductors
BTA312X series B and C
12 A Three-quadrant triacs high commutation
3. Ordering information
Table 2. Ordering information
Type number Package
Name
Description
Version
BTA312X-600B TO-220F
BTA312X-600C
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; SOT186A
3-lead TO-220 ‘full pack’
BTA312X-800B
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DRM
repetitive peak off-state voltage
BTA312X-600B; BTA312X-600C
BTA312X-800B
I_T(RMS)
RMS on-state current
full sine wave; T_h ≤ 61 °C; see
Figure 4 and 5
I_TSM
non-repetitive peak on-state current full sine wave; T_j = 25 °C prior to
surge; see Figure 2 and 3
t = 20 ms
t = 16.7 ms
I²t
I²t for fusing
t = 10 ms
dI_T/dt
I_GM
P_GM
P_G(AV)
T_stg
T_j
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
I_TM = 20 A; I_G = 0.2 A;
dI_G/dt = 0.2 A/µs
over any 20 ms period
Min
[1] _-
-
-
-
-
-
-
-
-
-
−40
-
Max Unit
600
V
800
V
12
A
95
A
105
A
45
A²s
100
A/µs
2
A
5
W
0.5
W
+150 °C
125
°C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/µs.
BTA312X_SER_B_C_1
Product data sheet
Rev. 01 — 11 April 2007
© NXP B.V. 2007. All rights reserved.
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