BLF6G20-45 Datasheet, PDF (2/12 Pages) NXP Semiconductors – UHF power LDMOS transistor

NXP Semiconductors
BLF6G20-45; BLF6G20S-45
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
2. Pinning information
Table 2. Pinning
Pin
Description
BLF6G20-45 (SOT608A)
1
drain
2
gate
3
source
BLF6G20S-45 (SOT608B)
1
drain
2
gate
3
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
[1]
3
2
1
2
3
sym112
1
[1]
3
2
1
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
BLF6G20-45
-
flanged ceramic package; 2 mounting holes; 2 leads
BLF6G20S-45 -
ceramic earless flanged package; 2 leads
Version
SOT608A
SOT608B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
T_stg
storage temperature
T_j
junction temperature
Min Max Unit
-
65 V
−0.5 +13 V
-
13 A
−65 +150 °C
-
225 °C
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Rev. 02 — 25 August 2008
© NXP B.V. 2008. All rights reserved.
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