BLF147 Datasheet, PDF (2/15 Pages) NXP Semiconductors – VHF power MOS transistor

NXP Semiconductors
VHF power MOS transistor
Product specification
BLF147
FEATURES
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch.
PINNING - SOT121B
PIN
1
drain
2
source
3
gate
4
source
DESCRIPTION
APPLICATIONS
• Industrial and military applications in the HF/VHF
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
transistor encapsulated in a 4-lead, SOT121B flange
package with a ceramic cap. All leads are isolated from the
flange. A marking code, showing gate-source voltage
(V_GS) information is provided for matched pair
applications. Refer to the “General” section of the
handbook for further information.
handbook, halfpage
1
4
d
g
s
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A, and
SNW-FQ-302B.
2
3
MAM267
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
RF performance at T_h = 25 °C in a common source test circuit.
MODE OF
f
V_DS
P_L
OPERATION
(MHz)
(V)
(W)
SSB, class-AB
CW, class-B
28
28
150 (PEP)
108
28
150
G_p
(dB)
>17
typ. 14
η_D
(%)
>35
typ. 70
d₃
(dB)
<−30
−
d₅
(dB)
<−30
−
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
Rev. 06 - 5 December 2006
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