BGD814_01 Datasheet, PDF (2/12 Pages) NXP Semiconductors – 860 MHz, 20 dB gain power doubler amplifier

Philips Semiconductors
860 MHz, 20 dB gain power doubler amplifier
Product specification
BGD814
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN
1
2, 3
5
7, 8
9
DESCRIPTION
input
common
+V_B
common
output
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
123 5 789
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
G_p
power gain
I_tot
total current consumption (DC)
CONDITIONS
f = 45 MHz
f = 870 MHz
V_B = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_B
V_i
T_stg
T_mb
PARAMETER
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
MIN.
19.7
20.5
380
MAX.
20.3
21.5
410
UNIT
dB
dB
mA
MIN.
−
−
−40
−20
MAX.
30
70
+100
+100
UNIT
V
dBmV
°C
°C
2001 Nov 01
2