BGD502_01 Datasheet, PDF (2/8 Pages) NXP Semiconductors – 550 MHz, 18.5 dB gain power doubler amplifier

Philips Semiconductors
550 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD502
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• TiPtAu metallized crystals ensure optimal reliability.
DESCRIPTION
Hybrid amplifier modules for CATV systems operating
over a frequency range of 40 to 550 MHz at a voltage
supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5
+V_B
7, 8
common
9
output
handbook, halfpage
123 5 789
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
G_p
PARAMETER
power gain
I_tot
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 550 MHz
V_B = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V_i
T_stg
T_mb
PARAMETER
RF input voltage
storage temperature
operating mounting base temperature
MIN.
18
18.8
−
MAX.
19
20.8
435
UNIT
dB
dB
mA
MIN.
−
−40
−20
MAX.
65
+100
+100
UNIT
dBmV
°C
°C
2001 Nov 15
2