BFR92AW Datasheet, PDF (2/13 Pages) NXP Semiconductors – NPN 5 GHz wideband transistor

NXP Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92AW
FEATURES
• High power gain
• Gold metallization ensures
excellent reliability
• SOT323 (S-mini) package.
APPLICATIONS
It is designed for use in RF amplifiers,
mixers and oscillators with signal
frequencies up to 1 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT323 (S-mini) package.
The BFR92AW uses the same crystal
as the SOT23 version, BFR92A.
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
handbook, 2 columns
3
1
2
Top view
MBC870
Marking code: P2.
Fig.1 SOT323
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
I_C
P_tot
h_FE
C_re
f_T
G_UM
F
T_j
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
current gain
feedback capacitance
transition frequency
maximum unilateral power
gain
noise figure
junction temperature
open emitter
open base
up to T_s = 93 °C; note 1
I_C = 15 mA; V_CE = 10 V
I_C = 0; V_CE = 10 V; f = 1 MHz;
T_amb = 25 °C
I_C = 15 mA; V_CE = 10 V; f = 500 MHz
I_C = 15 mA; V_CE = 10 V; f = 1 GHz;
T_amb = 25 °C
I_C = 15 mA; V_CE = 10 V; f = 2 GHz;
T_amb = 25 °C
I_C = 5 mA; V_CE = 10 V; f = 1 GHz;
Γ_s = Γ_opt
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
65
−
TYP.
−
−
−
−
90
0.35
MAX.
20
15
25
300
135
−
UNIT
V
V
mA
mW
pF
3.5
5
−
−
14
−
GHz
dB
−
8
−
dB
−
2
−
dB
−
−
150 °C
Rev. 03 - 12 March 2008
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