BB207 Datasheet, PDF (2/8 Pages) NXP Semiconductors – FM variable capacitance double diode

NXP Semiconductors
BB207
FM variable capacitance double diode
4. Marking
Table 3. Marking
Type number
BB207
[1] * = p: made in Hong Kong.
* = w: made in China.
5. Limiting values
Marking code^[1]
*13
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per diode
V_R
continuous reverse voltage
-
I_F
continuous forward current
-
T_stg
storage temperature
55
T_j
junction temperature
55
Max
Unit
15
V
20
mA
+150
C
+125
C
6. Characteristics
Table 5. Electrical Characteristics
T_j = 25 C unless otherwise specified.
Symbol
Parameter
Conditions
Per diode
I_R
r_s
C_d
--^C----^d---^--¹---^V---^--
C_{d  7.5 V }
reverse current
diode series resistance
diode capacitance
capacitance ratio
V_R = 15 V; see Figure 2
V_R = 15 V; T_j = 85 C; see Figure 2
f = 100 MHz; V_R = 3 V
V_R = 1 V; f = 1 MHz; see Figure 1
V_R = 3 V; f = 1 MHz; see Figure 1
V_R = 7.5 V; f = 1 MHz; see Figure 1
V_R = 8 V; f = 1 MHz; see Figure 1
f = 1 MHz
Min Typ Max Unit


10
nA


200 nA

0.2
0.4

76
81
86
pF

50.5 
pF
25.5 27.6 29.7 pF

26.3 
pF
2.6

3.3
BB207
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 September 2011
© NXP B.V. 2011. All rights reserved.
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