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BB182.115 Datasheet, PDF (2/6 Pages) NXP Semiconductors – VHF variable capacitance diode
NXP Semiconductors
BB182
VHF variable capacitance diode
4. Marking
Table 3. Marking codes
Type number
BB182
Marking code
2
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VR
reverse voltage
peak value in series with a 10 kΩ resistor
IF
forward current
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
- 32 V
- 35 V
- 20 mA
−55 +150 °C
−55 +125 °C
6. Characteristics
Table 5. Characteristics
Symbol
Parameter
Conditions
IR
reverse current
rs
diode series resistance
Cd
diode capacitance
see Figure 2
VR = 30 V
VR = 30 V; Tj = 85 °C
f = 100 MHz at Cd = 30 pF
f = 1 MHz; see Figure 1 and
Figure 3
Cd(1V)/Cd(2V) diode capacitance ratio (1 V to 2 V)
VR = 1 V
VR = 28 V
f = 1 MHz
Cd(1V)/Cd(28V) diode capacitance ratio (1 V to 28 V) f = 1 MHz
Cd(25V)/Cd(28V) diode capacitance ratio (25 V to 28 V) f = 1 MHz
∆Cd/Cd
diode capacitance matching
VR = 1 V to 28 V; in a sequence
of 10 diodes (gliding)
Min
-
-
-
52
2.48
-
20.6
-
-
Typ
-
-
1.0
-
2.7
1.31
22
1.05
-
Max
10
200
1.2
62
2.89
-
-
-
2
Unit
nA
nA
Ω
pF
pF
%
BB182_3
Product data sheet
Rev. 03 — 24 February 2009
© NXP B.V. 2009. All rights reserved.
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