BAS521 Datasheet, PDF (2/8 Pages) NXP Semiconductors – High voltage switching diode

NXP Semiconductors
High voltage switching diode
Product data sheet
BAS521
FEATURES
• High switching speed: max. 50 ns
• High continuous reverse voltage: 300 V
• Repetitive peak forward current: 625 mA
• Ultra small plastic SMD package.
APPLICATIONS
• High speed switching
• High voltage switching.
DESCRIPTION
The BAS521 is a high-voltage switching diode fabricated in
planar technology and encapsulated in an ultra small
SOD523 (SC-79) plastic SMD package.
PINNING
PIN
1
;²
handbook, halfpage₁
Top view
DESCRIPTION
cathode
anode
2
MAM408
Marking code: L4.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD523; SC-79), and
symbol.
LIMITING VALUES
In accordance with the absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
V_R
V_RRM
I_F
I_FRM
I_FSM
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
T_s ≤ 90 °C; note 1
t_p = 1 ms; δ = 0.25
t_p = 1 µs; square wave; T_j = 25 °C
prior to surge
P_tot
T_stg
T_j
T_amb
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T_s ≤ 90 °C; note 1
Note
1. T_s is the temperature at the soldering point of the cathode tab.
MIN.
−
−
−
−
−
MAX.
300
300
250
1
4.5
UNIT
V
V
mA
A
A
−
500
mW
−65
+150 °C
−
150
°C
−65
+150 °C
2003 Aug 12
2