BAP65-02.115 Datasheet, PDF (2/9 Pages) NXP Semiconductors – Planar PIN diode in a SOD523 ultra small SMD plastic package

NXP Semiconductors
BAP65-02
Silicon PIN diode
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
V_R
continuous reverse voltage
-
I_F
continuous forward current
-
P_tot
total power dissipation
T_s  90 C
-
T_stg
storage temperature
65
T_j
junction temperature
65
T_amb
ambient temperature
40
Max
Unit
30
V
100
mA
715
mW
+150
C
+150
C
+85
C
6. Thermal characteristics
Table 5.
Symbol
R_{th j-s}
Thermal characteristics
Parameter
thermal resistance from junction
to soldering point
Conditions
Typ
Unit
85
K/W
7. Characteristics
Table 6. Characteristics
T_j = 25 C unless otherwise specified.
Symbol Parameter
V_F
forward voltage
I_R
reverse leakage current
C_d
diode capacitance
r_D
diode forward resistance
s₂₁²
isolation
s₂₁²
insertion loss
s₂₁²
insertion loss
Conditions
I_F = 50 mA
V_R = 20 V
V_R = 0 V; f = 1 MHz
V_R = 1 V; f = 1 MHz
V_R = 3 V; f = 1 MHz
V_R = 20 V; f = 1 MHz
I_F = 1 mA; f = 100 MHz
I_F = 5 mA; f = 100 MHz
I_F = 10 mA; f = 100 MHz
I_F = 100 mA; f = 100 MHz
V_R = 0; f = 900 MHz
V_R = 0; f = 1800 MHz
V_R = 0; f = 2450 MHz
I_F = 1 mA; f = 900 MHz
I_F = 1 mA; f = 1800 MHz
I_F = 1 mA; f = 2450 MHz
I_F = 5 mA; f = 900 MHz
I_F = 5 mA; f = 1800 MHz
I_F = 5 mA; f = 2450 MHz
Min
-
-
-
-
-
-
-
[1] _-
[1] _-
-
-
-
-
-
-
-
-
-
-
Typ
Max
Unit
0.9
1.1
V
-
20
nA
0.65
-
pF
0.55
0.9
pF
0.5
0.8
pF
0.375 -
pF
1
-

0.65
0.95

0.56
0.9

0.35
-

10
-
dB
5.8
-
dB
4.4
-
dB
0.11
-
dB
0.13
-
dB
0.16
-
dB
0.08
-
dB
0.11
-
dB
0.13
-
dB
BAP65-02
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 5 — 28 September 2010
© NXP B.V. 2010. All rights reserved.
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