BAP64LX Datasheet, PDF (2/8 Pages) NXP Semiconductors – Silicon PIN diode

NXP Semiconductors
BAP64LX
Silicon PIN diode
4. Marking
Table 3. Marking
Type number
BAP64LX
Marking code
LE
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V_R
reverse voltage
-
60
V
I_F
forward current
-
100
mA
P_tot
total power dissipation
T_sp = 90 °C
-
150
mW
T_stg
storage temperature
−65
+150
°C
T_j
junction temperature
−65
+150
°C
6. Thermal characteristics
Table 5.
Symbol
R_th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
Unit
56
K/W
7. Characteristics
Table 6. Characteristics
T_amb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
V_F
forward voltage
I_F = 100 mA
I_R
reverse current
V_R = 100 V
C_d
diode capacitance
see Figure 1; f = 1 MHz;
V_R = 0 V
V_R = 1 V
V_R = 20 V
r_D
diode forward resistance see Figure 2; f = 100 MHz;
I_F = 0.5 mA
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
ISL
isolation
see Figure 3; V_R = 0 V;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
BAP64LX_1
Product data sheet
Rev. 01 — 29 June 2007
Min Typ Max Unit
-
0.95 1.1
V
-
-
100 nA
-
0.48 -
pF
-
0.34 -
pF
-
0.17 0.30 pF
-
31
50
Ω
-
16
26
Ω
-
2.6
4.4
Ω
-
0.9
1.5
Ω
-
22
-
dB
-
16
-
dB
-
14
-
dB
© NXP B.V. 2007. All rights reserved.
2 of 8