74LVC1G99 Datasheet, PDF (16/26 Pages) NXP Semiconductors – Ultra-configurable multiple function gate; 3-state

NXP Semiconductors
74LVC1G99
Ultra-configurable multiple function gate; 3-state
Table 24. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V; for test circuit see Figure 22.
Symbol Parameter
Conditions
25 °C
Min Typ^[1] Max
t_en
enable time
OE to Y; see Figure 21
[3]
V_CC = 1.65 V to 1.95 V
-
5.7
-
V_CC = 2.3 V to 2.7 V
-
3.8
-
V_CC = 2.7 V
-
4.2
-
V_CC = 3.0 V to 3.6 V
-
3.5
-
V_CC = 4.5 V to 5.5 V
-
2.7
-
t_dis
disable time
OE to Y; see Figure 21
[4]
V_CC = 1.65 V to 1.95 V
-
5.7
-
V_CC = 2.3 V to 2.7 V
-
3.6
-
V_CC = 2.7 V
-
4.5
-
V_CC = 3.0 V to 3.6 V
-
4.5
-
V_CC = 4.5 V to 5.5 V
-
3.4
-
C_PD
power dissipation per buffer (output enabled);
[5]
capacitance
f_i = 10 MHz; C_L = 50 pF;
V_I = GND to V_CC
V_CC = 1.65 V to 1.95 V
-
14
-
V_CC = 2.3 V to 2.7 V
-
16
-
V_CC = 2.7 V
-
18
-
V_CC = 3.0 V to 3.6 V
-
25
-
V_CC = 4.5 V to 5.5 V
-
30
-
[1] All typical values are measured at nominal V_CC.
[2] t_pd is the same as t_PLH and t_PHL.
[3] t_en is the same as t_PZH and t_PZL.
[4] t_dis is the same as t_PHZ and t_PLZ.
[5] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of the outputs.
−40 °C to +125 °C Unit
Min Max Max
(85 °C) (125 °C)
2.0 25.2
1.4 11.3
1.4 8.6
1.4 7.0
1.4 4.7
32.0 ns
14.0 ns
11.0 ns
9.0 ns
6.0 ns
3.0 15.0
2.0 5.8
2.0 6.6
2.1 5.9
1.0 4.5
19.0 ns
7.3 ns
8.2 ns
7.4 ns
5.6 ns
-
-
-
-
-
-
-
-
-
-
- pF
- pF
- pF
- pF
- pF
74LVC1G99_1
Product data sheet
Rev. 01 — 3 January 2008
© NXP B.V. 2008. All rights reserved.
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