PBSS4160PANP Datasheet, PDF (14/21 Pages) NXP Semiconductors – 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4160PANP
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
-1.2
V_BE
(V)
-0.8
(1)
(2)
-0.4
(3)
006aad214
-1.2
V_BEsat
(V)
-1.0
-0.8
-0.6
-0.4
006aad215
(1)
(2)
(3)
0
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 20. TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
10
V_CEsat
(V)
006aad216
1
(1)
-0.2
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig. 21. TR2 (PNP): Base-emitter saturation voltage as a
function of collector current; typical values
-10
V_CEsat
(V)
006aad217
-1
(2)
10^-1
(3)
10^-2
-10^-1
(1)
(2)
-10^-2
(3)
10^-3
10^-1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
-10^-3
-10^-1
-1
-10
-10²
-10³
-10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig. 22. TR2 (PNP): Collector-emitter saturation voltage Fig. 23. TR2 (PNP): Collector-emitter saturation voltage
as a function of collector current; typical values
as a function of collector current; typical values
PBSS4160PANP
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 January 2013
© NXP B.V. 2013. All rights reserved
14 / 21