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PBSS4041SPN Datasheet, PDF (12/20 Pages) NXP Semiconductors – 60 V NPN/PNP low VCEsat (BISS) transistor
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NXP Semiconductors
PBSS4041SPN
60 V NPN/PNP low VCEsat (BISS) transistor
−1
VCEsat
(V)
−10−1
006aac362
(1)
(2)
−1
VCEsat
(V)
−10−1
−10−2
006aac363
(1)
(2)
(3)
(3)
−10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 17. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
103
RCEsat
(Ω)
102
006aac364
10
1
10−1
10−2
−10−1
−1
(1)
(3)
(2)
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 19. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
−10−3
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 18. TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
103
RCEsat
(Ω)
102
006aac365
(1)
10
(2)
1
(3)
10−1
10−2
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 20. TR2 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBSS4041SPN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 20 October 2010
© NXP B.V. 2010. All rights reserved.
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