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TJA1021_10 Datasheet, PDF (11/25 Pages) NXP Semiconductors – LIN 2.1/SAE J2602 transceiver
NXP Semiconductors
TJA1021
LIN 2.1/SAE J2602 transceiver
10. Static characteristics
Table 7. Static characteristics
VBAT = 5.5 V to 27 V; Tvj = 40 C to +150 C; RL(LIN-VBAT) = 500 ; all voltages are defined with respect to ground; positive
currents flow into the IC; typical values are given at VBAT = 12 V; unless otherwise specified.[1]
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply
IBAT
battery supply current
Sleep mode
2
7
10
A
VLIN = VBAT; VWAKE_N = VBAT
VTXD = 0 V; VSLP_N = 0 V
Standby mode; bus recessive
150
450
1000
A
VINH = VBAT; VLIN = VBAT
VWAKE_N = VBAT; VTXD = 0 V
VSLP_N = 0 V
Standby mode; bus dominant
300
800
1200
A
VBAT = 12 V; VINH = 12 V
VLIN = 0 V; VWAKE_N = 12 V
VTXD = 0 V VSLP_N = 0 V
Normal mode; bus recessive
VINH = VBAT; VLIN = VBAT
VWAKE_N = VBAT; VTXD = 5 V
VSLP_N = 5 V
300
800
1600
A
Normal mode; bus dominant
1
2
4
mA
VBAT = 12 V; VINH = 12 V
VWAKE_N = 12 V; VTXD = 0 V
VSLP_N = 5 V
Power-on reset
Vth(POR)L
LOW-level power-on reset power-on reset
threshold voltage
1.6
3.1
3.9
V
Vth(POR)H
HIGH-level power-on reset
threshold voltage
2.3
3.4
4.3
V
Vhys(POR)
power-on reset hysteresis
voltage
0.05
0.3
1
V
Vth(VBATL)L
LOW-level VBAT LOW
threshold voltage
3.9
4.4
4.7
V
Vth(VBATL)H
HIGH-level VBAT LOW
threshold voltage
4.2
4.7
4.9
V
Vhys(VBATL)
VBAT LOW hysteresis
voltage
0.05
0.3
1
V
Pin TXD
VIH
VIL
Vhys
RPD(TXD)
HIGH-level input voltage
LOW-level input voltage
hysteresis voltage
pull-down resistance on pin VTXD = 5 V
TXD
2
-
7
V
0.3
-
+0.8
V
50
200
400
mV
140
500
1200
k
IIL
LOW-level input current
VTXD = 0 V
5
-
+5
A
IOL
LOW-level output current local wake-up request
1.5
-
-
mA
Standby mode; VWAKE_N = 0 V
VLIN = VBAT; VTXD = 0.4 V
TJA1021
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 30 December 2010
© NXP B.V. 2010. All rights reserved.
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