BC639 Datasheet, PDF (10/15 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

NXP Semiconductors
BC639; BCP56; BCX56
80 V, 1 A NPN medium power transistors
300
h_FE
(1)
200
(2)
100
(3)
006aaa080
1.6
I_C
(A)
1.2
0.8
0.4
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I_B (mA) = 50 45 40 35 30
25
20
15
10
5
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 10. DC current gain as a function of collector
current; typical values
1.2
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V_BE
(V)
0.8
(1)
(2)
0.4
(3)
0
0
0.4
0.8
1.2
1.6
2.0
V_CE (V)
T_amb = 25 °C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
1
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V_CEsat
(V)
10^−1
(1)
(2)
(3)
0
10^−1
1
10
10²
10³
10⁴
I_C (mA)
V_CE = 2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 150 °C
Fig 12. Base-emitter voltage as a function of collector
current; typical values
10^−2
10^−1
1
10
10²
10³
10⁴
I_C (mA)
I_C/I_B = 10
(1) T_amb = 150 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 13. Collector-emitter saturation voltage as a
function of collector current; typical values
BC639_BCP56_BCX56_8
Product data sheet
Rev. 08 — 22 June 2007
© NXP B.V. 2007. All rights reserved.
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