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| TK50A04K3 Datasheet, PDF (1/9 Pages) NXP Semiconductors – MOSFETs Silicon N-channel MOS (U-MOSIV) | |||
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MOSFETs Silicon N-channel MOS (U-MOSî¯)
TK50A04K3
1. Applications
⢠Automotive
⢠Motor Drivers
⢠Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 2.7 m⦠(typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(3) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK50A04K3
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25î unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
50
A
Drain current (pulsed)
(Note 1)
IDP
200
Power dissipation
(Tc = 25î)
PD
42
W
Single-pulse avalanche energy
(Note 2)
EAS
299
mJ
Avalanche current
IAR
50
A
Channel temperature
(Note 3)
Tch
175
î
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2013-02-19
Rev.1.0
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