TK20J60W Datasheet, PDF (1/10 Pages) NXP Semiconductors – MOSFETs Silicon N-Channel MOS (DTMOSIV)

MOSFETs Silicon N-Channel MOS (DTMOS)
TK20J60W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 0.13 Ω (typ.)
by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: V_th = 2.7 to 3.7 V (V_DS = 10 V, I_D = 1 mA)
3. Packaging and Internal Circuit
TK20J60W
1: Gate
2: Drain (Heatsink)
3: Source
TO-3P(N)
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Mounting torque
(T_c = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
V_DSS
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
I_DR
I_DRP
T_ch
T_stg
TOR
600
±30
20
80
165
200
5
20
80
150
-55 to 150
0.8
V
A
W
mJ
A

Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2013-01-21
Rev.1.0