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PUMD16_05 Datasheet, PDF (1/10 Pages) NXP Semiconductors – NPN/PNP resistor-equipped transistors R1 = 22 kW, R2 = 47 kW
PEMD16; PUMD16
NPN/PNP resistor-equipped transistors;
R1 = 22 kΩ, R2 = 47 kΩ
Rev. 02 — 7 June 2005
Product data sheet
1. Product profile
1.1 General description
NPN/PNP resistor-equipped transistors.
Table 1: Product overview
Type number
Package
Philips
PEMD16
SOT666
PUMD16
SOT363
JEITA
-
SC-88
PNP/PNP
complement
PEMB16
PUMB16
NPN/NPN
complement
PEMH16
PUMH16
1.2 Features
s Built-in bias resistors
s Simplifies circuit design
s Reduces component count
s Reduces pick and place cost
1.3 Applications
s Low current peripheral driver
s Control of IC inputs
s Replacement of general-purpose transistors in digital applications
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min Typ
-
-
-
-
15.4 22
1.7 2.1
Max Unit
50
V
100 mA
28.6 kΩ
2.6