PSMN030-60YS Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET

PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Rev. 01 — 11 February 2010
Objective data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ Advanced TrenchMOS provides low
RDSon and low gate charge
„ High efficiency gains in switching
power converters
„ Improved mechanical and thermal
characteristics
„ LFPAK provides maximum power
density in a Power SO8 package
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Motor control
„ Server power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
P_tot
total power dissipation
T_j
junction temperature
Dynamic characteristics
T_mb = 25 °C; see Figure 2
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 15 A;
V_DS = 30 V; see Figure 14
and 15
Static characteristics
R_DSon
drain-source on-state
resistance
V_GS = 10 V; I_D = 15 A;
T_j = 100 °C; see Figure 12
V_GS = 10 V; I_D = 15 A;
T_j = 25 °C; see Figure 13
Min Typ Max Unit
-
-
60 V
-
-
29 A
-
-
-55 -
56 W
175 °C
-
3
-
nC
-
13 -
nC
-
-
39.5 mΩ
-
19.1 24.7 mΩ