PSMN015-110P Datasheet, PDF (1/13 Pages) NXP Semiconductors – TrenchMOS Standard level FET

PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 02 — 6 October 2009
Product data sheet
1. Product profile
1.1 General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Low conduction losses due to low
on-state resistance
„ Simple gate drive required due to low
gate charge
1.3 Applications
„ DC-to-DC convertors
„ Switched-mode power supplies
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
P_tot
total power dissipation
Dynamic characteristics
Q_GD
gate-drain charge
Static characteristics
R_DSon drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 175 °C
T_mb = 25 °C; V_GS = 10 V;
see Figure 1 and 3
T_mb = 25 °C; see Figure 2
Min Typ Max Unit
-
-
110 V
-
-
75 A
-
-
300 W
V_GS = 10 V; I_D = 75 A;
V_DS = 80 V; T_j = 25 °C;
see Figure 11
-
35 -
nC
V_GS = 10 V; I_D = 25 A;
-
12 15 mΩ
T_j = 25 °C; see Figure 9
and 10