PMZB670UPE Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, single P-channel Trench MOSFET

PMZB670UPE
20 V, single P-channel Trench MOSFET
Rev. 3 — 23 March 2012
Product data sheet
1. Product profile
1.1 General description
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Low threshold voltage
 Trench MOSFET technology
 ESD protection up to 2 kV
 Ultra thin package profile of 0.37 mm
1.3 Applications
 Relay driver
 High-speed line driver
 High-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
T_j = 25 °C
V_GS = -4.5 V; T_amb = 25 °C
-
-8
[1]
-
R_DSon
drain-source on-state V_GS = -4.5 V; I_D = -400 mA; T_j = 25 °C
-
resistance
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².
Typ Max Unit
-
-20 V
-
8
V
-
-680 mA
0.67 0.85 Ω