PMZB290UNE Datasheet, PDF (1/15 Pages) NXP Semiconductors – 20 V, single N-channel Trench MOSFET

PMZB290UNE
20 V, single N-channel Trench MOSFET
Rev. 3 — 23 March 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
 Very fast switching
 Low threshold voltage
 Trench MOSFET technology
 ESD protection up to 2 kV
 Ultra thin package profile of 0.37mm
1.3 Applications
 Relay driver
 High-speed line driver
 Low-side loadswitch
 Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
V_DS
drain-source voltage T_j = 25 °C
V_GS
gate-source voltage
I_D
drain current
V_GS = 4.5 V; T_amb = 25 °C
[1]
Static characteristics
R_DSon
drain-source on-state V_GS = 4.5 V; I_D = 500 mA; T_j = 25 °C
resistance
Min Typ Max Unit
-
-
20 V
-8
-
8
V
-
-
1
A
-
290 380 mΩ
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².