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PMZ270XN Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS extremely low level FET | |||
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PMZ270XN
N-channel TrenchMOS extremely low level FET
Rev. 01. â 21 February 2008
Product data sheet
1. Product proï¬le
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Proï¬le 55 % lower than SOT23
I Low on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Low threshold voltage
I Fast switching
1.3 Applications
I Driver circuits
I DC-to-DC converters
I Load switching in portable appliances
1.4 Quick reference data
I VDS ⤠20 V
I RDSon ⤠340 mâ¦
I ID ⤠2.15 A
I Ptot ⤠2.50 W
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
Simpliï¬ed outline
1
3
2
Transparent
top view
SOT883 (SC-101)
Symbol
DD
GG
mmbbbb007766 SS
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