PMZ250UN Datasheet, PDF (1/13 Pages) NXP Semiconductors – N-channel TrenchMOS extremely low level FET

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PMZ250UN
N-channel TrenchMOS extremely low level FET
Rev. 01 — 21 February 2008
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Lower on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Low threshold voltage
I Fast switching
1.3 Applications
I Driver circuits
I DC-to-DC converters
I Load switching in portable appliances
1.4 Quick reference data
I V_DS ≤ 20 V
I R_DSon ≤ 300 mΩ
I I_D ≤ 2.28 A
I P_tot ≤ 2.50 W
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
Simplified outline
1
3
2
Transparent
top view
SOT883 (SC-101)
Symbol
D
G
mbb076 S