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PMXB360ENEA Datasheet, PDF (1/15 Pages) NXP Semiconductors – 80 V, N-channel Trench MOSFET | |||
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PMXB360ENEA
80 V, N-channel Trench MOSFET
16 September 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
⢠Logic-level compatible
⢠Leadless ultra small and ultra thin SMD plastic package: 1.1 à 1.0 à 0.37 mm
⢠Tin-plated 100 % solderable side pads for optical solder inspection
⢠ElectroStatic Discharge (ESD) protection > 2 kV HBM
⢠AEC-Q101 qualified
3. Applications
⢠Relay driver
⢠Power management in automotive and industrial applications
⢠LED driver
⢠DC-to-DC converter
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; ID = 1.1 A; Tj = 25 °C
Min Typ Max Unit
-
-
80
V
-20 -
20
V
[1]
-
-
1.1 A
-
345 450 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
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