PMT200EN Datasheet, PDF (1/13 Pages) NXP Semiconductors – 100 V N-channel Trench MOSFET

PMT200EN
100 V N-channel Trench MOSFET
25 October 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223
(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
• Logic-level compatible
• Very fast switching
• Trench MOSFET technology
1.3 Applications
• Relay driver
• LED backlight driver
• Low-side loadswitch
• Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
V_DS
drain-source voltage
V_GS
gate-source voltage
I_D
drain current
Static characteristics
R_DSon
drain-source on-state
resistance
Conditions
T_j = 25 °C
V_GS = 10 V; T_amb = 25 °C; t ≤ 5 s
V_GS = 10 V; I_D = 1.5 A; T_j = 25 °C
Min Typ Max Unit
-
-
100 V
-20 -
20
V
[1]
-
-
3.3 A
-
190 235 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm².
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