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PMPB40SNA Datasheet, PDF (1/15 Pages) NXP Semiconductors – 60 V N-channel Trench MOSFET | |||
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PMPB40SNA
60 V N-channel Trench MOSFET
2 July 2013
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
2. Features and benefits
⢠Trench MOSFET technology
⢠Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
⢠Exposed drain pad for excellent thermal conduction
⢠Tin-plated 100 % solderable side pads for optical solder inspection
⢠AEC-Q101 qualified
3. Applications
⢠Relay driver
⢠High-speed line driver
⢠Low-side load switch
⢠Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tsp = 25 °C
VGS = 10 V; ID = 4.8 A; Tj = 25 °C
Min Typ Max Unit
-
-
60
V
-20 -
20
V
-
-
12.9 A
-
34
43
mΩ
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