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PMPB20EN Datasheet, PDF (1/15 Pages) NXP Semiconductors – 30 V N-channel Trench MOSFET | |||
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PMPB20EN
30 V N-channel Trench MOSFET
Rev. 1 â 16 May 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power
DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
1.2 Features and benefits
ï® Trench MOSFET technology
ï® Very fast switching
ï® Small and leadless ultra thin SMD
plastic package: 2 x 2 x 0.65 mm
ï® Exposed drain pad for excellent
thermal conduction
ï® Tin-plated 100 % solderable side pads
for optical solder inspection
1.3 Applications
ï® Charging switch for portable devices
ï® DC-to-DC converters
ï® Power management in battery-driven
portables
ï® Hard disk and computing power
management
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tj = 25 °C
VGS = 10 V; Tamb = 25 °C; t ⤠5 s
VGS = 10 V; ID = 7 A; Tj = 25 °C
Min Typ Max Unit
-
-
30 V
-20 -
20 V
[1]
-
-
10.4 A
-
16.5 19.5 mâ¦
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
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