PMN50XP Datasheet, PDF (1/11 Pages) NXP Semiconductors – P-channel TrenchMOS extremely low level FET

PMN50XP
P-channel TrenchMOS extremely low level FET
Rev. 02 — 2 October 2007
Product data sheet
1. Product profile
1.1 General description
Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package. This product is designed and qualified for use in computing,
communications, consumer and industrial applications only.
1.2 Features
„ Low on-state losses
„ Low threshold voltage
1.3 Applications
„ Battery management
„ Load Switching
„ Battery powered portable equipment
„ Low power DC to DC converters
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
V_DS
drain-source voltage
I_D
drain current
Dynamic characteristics
Q_GD gate-drain charge
Static characteristics
R_DSon drain-source on-state
resistance
Conditions
T_j ≥ 25 °C; T_j ≤ 150 °C
V_GS = -4.5 V; T_sp = 25 °C;
see Figure 1 and 3
V_GS = -4.5 V; I_D = -4.7 A;
V_DS = -10 V; T_j = 25 °C;
see Figure 9 and 10
V_GS = -4.5 V; I_D = -2.8 A;
T_j = 25 °C; see Figure 7 and 8
Min Typ Max Unit
-
-
-20 V
-
-
-4.8 A
-
1.3 -
nC
-
48 60 mΩ