PMGD780SN Datasheet, PDF (1/14 Pages) NXP Semiconductors – Dual N-channel mTrenchMOS standard level FET

PMGD780SN
Dual N-channel μTrenchMOS standard level FET
Rev. 02 — 19 April 2010
Product data sheet
1. Product profile
1.1 General description
Dual N-channel enhancement mode field-effect transistor in a small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
1.2 Features and benefits
„ Surface-mounted package
„ Standard level threshold voltage
„ Low on-state resistance
„ Footprint 40 % smaller than SOT23
„ Fast switching
„ Dual device
1.3 Applications
„ Driver circuits
„ Switching in portable appliances
1.4 Quick reference data
„ V_DS ≤ 60 V
„ P_tot ≤ 0.41 W
„ I_D ≤ 0.49 A
„ R_DSon ≤ 920 mΩ
2. Pinning information
Table 1.
Pin
1
2
3
4
5
6
Pinning - SOT363 (SC-88), simplified outline and symbol
Description
Simplified outline
Graphic symbol
source1 (S1)
gate1 (G1)
654
D₁
D₂
drain2 (D2)
source2 (S2)
gate2 (G2)
drain1 (D1)
123
SOT363 (SC-88)
S₁ G₁ S₂ G₂
msd901