PMF3800SN Datasheet, PDF (1/12 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

PMF3800SN
N-channel TrenchMOS standard level FET
Rev. 03 — 11 November 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Electrostatically robust due to
integrated protection diodes
„ Saves PCB space due to small
footprint
„ Suitable for high frequency
applications due to fast switching
characteristics
„ Suitable for logic level gate drive
sources
1.3 Applications
„ High-speed line drivers
„ Relay drivers
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
V_DS
drain-source voltage T_j ≥ 25 °C; T_j ≤ 150 °C
I_D
drain current
T_sp = 25 °C; V_GS = 10 V; see
Figure 1 and 3
P_tot
total power
dissipation
T_sp = 25 °C; see Figure 2
Dynamic characteristics
Q_GD
Q_G(tot)
gate-drain charge
total gate charge
V_GS = 10 V; I_D = 0.5 A;
V_DS = 48 V; T_j = 25 °C; see
Figure 11
Static characteristics
R_DSon
drain-source
on-state resistance
V_GS = 4.5 V; I_D = 200 mA;
T_j = 25 °C; see Figure 9 and
10
V_GS = 10 V; I_D = 500 mA;
T_j = 25 °C; see Figure 9 and
10
Min Typ Max Unit
-
-
60 V
-
-
260 mA
-
-
0.56 W
-
0.07 -
nC
-
0.85 -
nC
-
3.8 5.3 Ω
-
2.8 4.5 Ω